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CY7C1911KV18-250BZC from CY,Cypress

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CY7C1911KV18-250BZC

Manufacturer: CY

18-Mbit QDR?II SRAM Four-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1911KV18-250BZC,CY7C1911KV18250BZC CY 7 In Stock

Description and Introduction

18-Mbit QDR?II SRAM Four-Word Burst Architecture The CY7C1911KV18-250BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 4Mb (512K x 8)  
- **Speed**: 250 MHz  
- **Operating Voltage**: 1.8V (±5%)  
- **Access Time**: 3.6 ns (max)  
- **I/O Type**: Single Data Rate (SDR)  
- **Organization**: 512K words × 8 bits  
- **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
- **Operating Temperature Range**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Features**:  
  - Byte Write capability  
  - On-chip address and data pipelining  
  - ZZ (Sleep Mode) for power saving  
  - JTAG boundary scan support  
  - 3.3V or 1.8V I/O option (LVCMOS)  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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