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CY7C1650KV18-400BZC from CY,Cypress

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CY7C1650KV18-400BZC

Manufacturer: CY

144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1650KV18-400BZC,CY7C1650KV18400BZC CY 3 In Stock

Description and Introduction

144-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) The CY7C1650KV18-400BZC is a high-performance synchronous SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies).  

**Key Specifications:**  
- **Type:** 16Mb (1M x 16) Synchronous SRAM  
- **Speed:** 400 MHz (2.5 ns clock-to-data access)  
- **Voltage Supply:** 1.8V ±5% (VDD)  
- **I/O Voltage:** 1.8V (HSTL compatible)  
- **Organization:** 1,048,576 words × 16 bits  
- **Interface:** Pipelined with echo clocks (CQ, CQ#)  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Package:** 165-ball FBGA (Fine-pitch Ball Grid Array)  
- **Features:**  
  - Single clock (CK, CK#) operation  
  - Byte Write capability  
  - JTAG boundary scan support  
  - On-chip address and data pipelining  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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