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CY7C1625KV18-333BZXC from CY,Cypress

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CY7C1625KV18-333BZXC

Manufacturer: CY

144-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1625KV18-333BZXC,CY7C1625KV18333BZXC CY 12 In Stock

Description and Introduction

144-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1625KV18-333BZXC is a high-performance synchronous SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies).  

**Key Specifications:**  
- **Type:** QDR™-II+ SRAM (Quad Data Rate)  
- **Density:** 18 Mbit (1M x 18)  
- **Speed:** 333 MHz (3.0 ns clock cycle)  
- **Voltage Supply:** 1.8V (VDD)  
- **I/O Voltage:** 1.8V (HSTL compatible)  
- **Organization:** 1,048,576 words × 18 bits  
- **Interface:** Separate input/output (QDR architecture)  
- **Burst Length:** 2 or 4 (programmable)  
- **Package:** 165-ball BGA (13mm × 15mm)  
- **Operating Temperature:** Commercial (0°C to +70°C)  
- **Features:** Pipelined, echo clocks, on-chip termination (OCT)  

This device is designed for high-bandwidth networking and telecommunications applications.  

(Source: Cypress/Infineon datasheet)

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