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CY7C1570KV18-500BZXC from CYPRESS

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CY7C1570KV18-500BZXC

Manufacturer: CYPRESS

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1570KV18-500BZXC,CY7C1570KV18500BZXC CYPRESS 20 In Stock

Description and Introduction

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) The CY7C1570KV18-500BZXC is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 36 Mb (2M x 18)  
3. **Speed**: 500 MHz  
4. **Operating Voltage**: 1.8V  
5. **Organization**: 2,097,152 words x 18 bits  
6. **Access Time**: 2.0 ns (max)  
7. **Cycle Time**: 2.0 ns (max)  
8. **Interface**: HSTL (High-Speed Transceiver Logic)  
9. **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
10. **Operating Temperature Range**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
11. **Features**:  
   - Pipelined operation for high-speed performance  
   - Single-cycle deselect for reduced power consumption  
   - Byte write capability  
   - JTAG boundary scan support  

This SRAM is commonly used in networking, telecommunications, and high-performance computing applications.

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