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CY7C15632KV18-450BZXI from CY,Cypress

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CY7C15632KV18-450BZXI

Manufacturer: CY

72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C15632KV18-450BZXI,CY7C15632KV18450BZXI CY 40 In Stock

Description and Introduction

72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) The CY7C15632KV18-450BZXI is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Density**: 36 Mb (1M x 36)
- **Organization**: 1,048,576 words × 36 bits
- **Supply Voltage**: 1.7V to 1.9V (nominal 1.8V)
- **Speed**: 450 MHz (2.2 ns clock-to-output)
- **I/O Type**: HSTL (High-Speed Transceiver Logic)
- **Operating Temperature**: Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array), 13mm × 15mm
- **Pipeline Stages**: Two-stage output pipeline
- **Access Time**: 2.2 ns (max)
- **Cycle Time**: 2.2 ns (max)
- **Power Consumption**: Active (TBD mA), Standby (TBD mA)
- **Features**: Supports burst mode operation, on-chip address registers, and ZZ (sleep) mode for power saving.

For detailed electrical characteristics or timing diagrams, refer to the official datasheet from Cypress/Infineon.

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