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CY7C1550KV18-400BZXC from CY,Cypress

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CY7C1550KV18-400BZXC

Manufacturer: CY

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1550KV18-400BZXC,CY7C1550KV18400BZXC CY 30 In Stock

Description and Introduction

72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.0 Cycle Read Latency) The CY7C1550KV18-400BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are the key specifications:

- **Density**: 36 Mb (2M x 18)
- **Organization**: 2,097,152 words × 18 bits
- **Technology**: Synchronous pipelined SRAM
- **Speed**: 400 MHz (2.5 ns clock cycle)
- **Voltage Supply**: 1.8V ±5% (VDD)
- **I/O Voltage**: 1.8V (HSTL-compatible)
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array)
- **Pin Count**: 165
- **Access Time**: 2.5 ns (pipelined)
- **Burst Modes**: Linear or interleaved burst sequences
- **Features**: 
  - Byte Write capability
  - On-chip address and data pipeline registers
  - ZZ (sleep mode) power-down feature
  - JTAG boundary scan (IEEE 1149.1 compliant)
  - Single-cycle deselect for reduced power consumption
- **Applications**: Networking, telecommunications, and high-performance computing.

For exact details, refer to the official datasheet from Infineon/Cypress.

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