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CY7C1545KV18-400BZXI from CY,Cypress

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15.625ms

CY7C1545KV18-400BZXI

Manufacturer: CY

72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1545KV18-400BZXI,CY7C1545KV18400BZXI CY 5 In Stock

Description and Introduction

72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) The CY7C1545KV18-400BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Memory Size**: 36 Mb (1M × 36)
- **Organization**: 1,048,576 words × 36 bits
- **Type**: Synchronous Pipelined SRAM
- **Speed**: 400 MHz (2.5 ns clock-to-data access)
- **Voltage Supply**: 1.8V (VDD) and 1.5V (VDDQ) for I/O
- **Interface**: HSTL (High-Speed Transceiver Logic)
- **Package**: 165-ball BGA (Ball Grid Array)
- **Operating Temperature**: Industrial (-40°C to +85°C)
- **Features**: 
  - Byte Write capability (4 byte write-enable signals)
  - On-chip address and control registers
  - Echo clock outputs for data capture
  - JTAG boundary scan (IEEE 1149.1 compliant)
  - Sleep mode for power reduction

This SRAM is designed for high-speed networking, telecommunications, and other applications requiring fast data access.

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