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CY7C1545KV18-400BZC from CYPRESS

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CY7C1545KV18-400BZC

Manufacturer: CYPRESS

72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1545KV18-400BZC,CY7C1545KV18400BZC CYPRESS 39 In Stock

Description and Introduction

72-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) The CY7C1545KV18-400BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

1. **Memory Size**: 18 Mb (1M x 18)  
2. **Organization**: 1,048,576 words × 18 bits  
3. **Speed**: 400 MHz (2.5 ns clock-to-data access)  
4. **Voltage Supply**: 1.8V ±5%  
5. **I/O Voltage**: 1.5V (HSTL compatible)  
6. **Architecture**: Synchronous pipelined with burst capability  
7. **Burst Length**: 2, 4, or 8 (linear or interleaved)  
8. **CAS Latency**: Programmable (2 or 3 cycles)  
9. **Package**: 165-ball FBGA (13mm × 15mm)  
10. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
11. **Features**:  
   - On-chip address and data pipeline registers  
   - ZZ (sleep mode) power-down feature  
   - JTAG boundary scan (IEEE 1149.1 compliant)  
   - Single-cycle deselect for reduced power consumption  

This SRAM is designed for high-speed networking, telecommunications, and computing applications.

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