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CY7C1520KV18-300BZI from CY,Cypress

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CY7C1520KV18-300BZI

Manufacturer: CY

72-Mbit DDR-II SRAM 2-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1520KV18-300BZI,CY7C1520KV18300BZI CY 50 In Stock

Description and Introduction

72-Mbit DDR-II SRAM 2-Word Burst Architecture The CY7C1520KV18-300BZI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 18 Mb (1M x 18)  
- **Speed**: 300 MHz (3.3 ns clock-to-data access)  
- **Voltage Supply**: 1.8V ±5% (VDD)  
- **I/O Voltage**: 1.5V (HSTL-compatible)  
- **Organization**: 1,048,576 words × 18 bits  
- **Package**: 165-ball BGA (Ball Grid Array)  
- **Operating Temperature**: Industrial (-40°C to +85°C)  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Burst Modes**: Linear or Interleaved  
- **Cycle Time**: 3.3 ns  
- **Latency**: 2 cycles (pipelined)  
- **Refresh**: Not required (SRAM)  
- **Additional Features**:  
  - Byte Write Control  
  - Single Clock Operation  
  - JTAG Boundary Scan  

This SRAM is designed for high-speed networking, telecommunications, and cache applications.

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