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CY7C1518KV18-300BZXC from CY,Cypress

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15.625ms

CY7C1518KV18-300BZXC

Manufacturer: CY

72-Mbit DDR II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1518KV18-300BZXC,CY7C1518KV18300BZXC CY 250 In Stock

Description and Introduction

72-Mbit DDR II SRAM Two-Word Burst Architecture The CY7C1518KV18-300BZXC is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Below are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 18 Mb (1M x 18)  
3. **Speed**: 300 MHz (3.3 ns clock-to-data access)  
4. **Voltage Supply**: 1.8V ±5% (VDD)  
5. **I/O Voltage**: 1.5V (HSTL or SSTL_18 compatible)  
6. **Organization**: 1,048,576 words × 18 bits  
7. **Interface**: HSTL/SSTL_18  
8. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
9. **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
10. **Features**:  
   - Pipelined operation for high bandwidth  
   - Burst mode support (linear/interleaved)  
   - ZZ (sleep) mode for power saving  
   - JTAG boundary scan (IEEE 1149.1 compliant)  
   - Parity support for error detection  

11. **Applications**: Networking, telecommunications, and high-performance computing systems.  

For exact details, refer to the official datasheet from Infineon/Cypress.

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