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CY7C1518KV18-250BZXI from CY,Cypress

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15.625ms

CY7C1518KV18-250BZXI

Manufacturer: CY

72-Mbit DDR II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1518KV18-250BZXI,CY7C1518KV18250BZXI CY 10 In Stock

Description and Introduction

72-Mbit DDR II SRAM Two-Word Burst Architecture The CY7C1518KV18-250BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Memory Type**: Synchronous Pipelined SRAM  
- **Density**: 18 Mbit (1M x 18)  
- **Speed**: 250 MHz (4 ns clock cycle)  
- **Voltage Supply**: 1.8V (VDD)  
- **I/O Voltage**: 1.8V (VDDQ)  
- **Organization**: 1,048,576 words x 18 bits  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Operating Temperature**: Industrial (-40°C to +85°C)  
- **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
- **Features**:  
  - Pipelined operation for high-speed performance  
  - Byte write capability  
  - Single-cycle deselect  
  - Echo clocks for data capture  
  - JTAG boundary scan (IEEE 1149.1 compliant)  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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