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CY7C1515KV18-333BZXI from CY,Cypress

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CY7C1515KV18-333BZXI

Manufacturer: CY

72-Mbit QDR?II SRAM Four-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1515KV18-333BZXI,CY7C1515KV18333BZXI CY 3 In Stock

Description and Introduction

72-Mbit QDR?II SRAM Four-Word Burst Architecture The CY7C1515KV18-333BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Density**: 18 Mb (1M x 18)
- **Organization**: 1,048,576 words × 18 bits
- **Speed**: 333 MHz (3.0 ns clock cycle)
- **Voltage Supply**: 1.8V ±5% (VDD) and 1.5V (VDDQ for HSTL I/O)
- **Interface**: HSTL (High-Speed Transceiver Logic)
- **Architecture**: Synchronous pipelined with registered inputs/outputs
- **Operating Temperature**: Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array), Pb-free (ZXI suffix)
- **Features**: 
  - Byte Write capability
  - On-chip address and data pipeline registers
  - Single-cycle deselect
  - JTAG boundary scan (IEEE 1149.1 compliant)
  - ZZ (sleep mode) power-down feature
  - 2-cycle read/write latency

This device is designed for high-speed networking, telecommunications, and other performance-critical applications.

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