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CY7C1514KV18-300BZXI from CY,Cypress

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CY7C1514KV18-300BZXI

Manufacturer: CY

72-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1514KV18-300BZXI,CY7C1514KV18300BZXI CY 136 In Stock

Description and Introduction

72-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1514KV18-300BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are the key specifications:

- **Memory Size**: 4 Mbit (256K x 18)
- **Organization**: 256K words × 18 bits
- **Type**: Synchronous Pipelined SRAM
- **Speed**: 300 MHz (3.3 ns clock-to-data access)
- **Voltage Supply**: 1.8V (VDD) core, 1.5V to 1.8V (VDDQ) for I/O
- **Interface**: HSTL (High-Speed Transceiver Logic) or SSTL (Stub Series Terminated Logic)
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)
- **Features**: 
  - Byte Write capability (Upper and Lower bytes)
  - Single-cycle deselect
  - Echo clocks for data capture
  - JTAG boundary scan (IEEE 1149.1 compliant)
  - On-chip address and data pipeline registers
  - Burst mode support (linear or interleaved)
  - ZZ (sleep mode) for power saving

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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