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CY7C1513KV18250BZXC from CYPRESS

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15.625ms

CY7C1513KV18250BZXC

Manufacturer: CYPRESS

72-Mbit QDR?II SRAM Four-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1513KV18250BZXC CYPRESS 10 In Stock

Description and Introduction

72-Mbit QDR?II SRAM Four-Word Burst Architecture The CY7C1513KV18250BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Below are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 18 Mb (1M x 18)  
3. **Speed**: 250 MHz (4 ns clock cycle)  
4. **Voltage Supply**: 1.8V (VDD) ±5%  
5. **I/O Voltage**: 1.8V (VDDQ)  
6. **Organization**: 1,048,576 words × 18 bits  
7. **Package**: 165-ball BGA (Ball Grid Array)  
8. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
9. **Interface**: HSTL (High-Speed Transceiver Logic)  
10. **Burst Modes**: Linear or Interleaved  
11. **Pipeline Stages**: Two-stage output pipeline  
12. **Features**:  
   - Byte Write capability  
   - Single-cycle deselect  
   - ZZ (Sleep Mode) support  
   - JTAG boundary scan (IEEE 1149.1 compliant)  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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