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CY7C1513KV18-250BZXI from CYPRESS

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CY7C1513KV18-250BZXI

Manufacturer: CYPRESS

72-Mbit QDR?II SRAM Four-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1513KV18-250BZXI,CY7C1513KV18250BZXI CYPRESS 1 In Stock

Description and Introduction

72-Mbit QDR?II SRAM Four-Word Burst Architecture The CY7C1513KV18-250BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 18 Mb (1M x 18)  
3. **Speed**: 250 MHz  
4. **Voltage Supply**: 1.8V (VDD) and 1.5V (VDDQ)  
5. **Organization**: 1,048,576 words × 18 bits  
6. **Access Time**: 3.6 ns (max)  
7. **I/O Type**: HSTL (High-Speed Transceiver Logic)  
8. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
9. **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
10. **Features**:  
   - Pipelined operation for high-speed applications  
   - Byte-wide write capability  
   - On-chip address and data pipeline registers  
   - Single-cycle deselect for reduced power consumption  
   - JTAG boundary scan support  

This SRAM is designed for networking, telecommunications, and other high-bandwidth applications.

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