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CY7C1512V18-200BZC from CY,Cypress

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CY7C1512V18-200BZC

Manufacturer: CY

72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1512V18-200BZC,CY7C1512V18200BZC CY 147 In Stock

Description and Introduction

72-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture The CY7C1512V18-200BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

1. **Memory Size**: 1.5 Mbit (512K x 36)  
2. **Organization**: 512K words × 36 bits  
3. **Speed**: 200 MHz  
4. **Access Time**: 3.5 ns (clock-to-data)  
5. **Voltage Supply**: 1.8V (VDD) ±5%  
6. **I/O Voltage**: 1.5V (VDDQ) ±5%  
7. **Package**: 165-ball FBGA (Fine-pitch Ball Grid Array)  
8. **Operating Temperature**: Commercial (0°C to +70°C)  
9. **Interface**: Synchronous with pipelined operation  
10. **Burst Modes**: Supports linear and interleaved burst sequences  
11. **Features**:  
   - Single-cycle deselect  
   - Byte write capability  
   - ZZ (sleep mode) for power saving  
   - JTAG boundary scan (IEEE 1149.1 compliant)  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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