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CY7C1512KV18-333BZI from CY,Cypress

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CY7C1512KV18-333BZI

Manufacturer: CY

72-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1512KV18-333BZI,CY7C1512KV18333BZI CY 4 In Stock

Description and Introduction

72-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1512KV18-333BZI is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are the key specifications:

1. **Memory Size**: 18 Mb (1M x 18)
2. **Type**: Synchronous Pipelined SRAM
3. **Speed**: 333 MHz (3.0 ns access time)
4. **Voltage Supply**: 1.8V ±5% (VDD)
5. **I/O Voltage**: 1.8V (HSTL-compatible)
6. **Organization**: 1,048,576 words x 18 bits
7. **Package**: 165-ball BGA (Ball Grid Array), 13mm x 15mm
8. **Temperature Range**: Industrial (-40°C to +85°C)
9. **Features**:
   - Pipelined operation for high-speed performance
   - HSTL (High-Speed Transceiver Logic) I/O
   - Single-cycle deselect for reduced power consumption
   - On-chip address and data pipeline registers
   - Byte write capability (two byte write control pins)
   - JTAG boundary scan (IEEE 1149.1 compliant)
   - ZZ (sleep mode) for power savings
10. **Applications**: Networking, telecommunications, and high-performance computing systems.

This SRAM is designed for applications requiring high bandwidth and low latency.

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