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CY7C1512KV18-300BZXI from CY,Cypress

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CY7C1512KV18-300BZXI

Manufacturer: CY

72-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1512KV18-300BZXI,CY7C1512KV18300BZXI CY 30 In Stock

Description and Introduction

72-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1512KV18-300BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now Infineon Technologies). Here are the key specifications:

- **Density**: 18 Mb (1M x 18)
- **Organization**: 1,048,576 words × 18 bits
- **Voltage Supply**: 1.7V to 1.9V (nominal 1.8V)
- **Speed**: 300 MHz (3.3 ns clock cycle)
- **Access Time**: 2.5 ns (maximum)
- **Interface**: HSTL (High-Speed Transceiver Logic)
- **Pipeline Stages**: Two-stage output pipeline
- **Operating Temperature**: Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array), 13mm × 15mm
- **I/O Type**: Common I/O (input/output shared)
- **Features**: 
  - Byte Write capability (×9 or ×18)
  - On-Die Termination (ODT)
  - Echo Clock (CQ/CQ#) for data capture
  - JTAG Boundary Scan (IEEE 1149.1 compliant)

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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