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CY7C1512KV18-250BZXI from CY,Cypress

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CY7C1512KV18-250BZXI

Manufacturer: CY

72-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1512KV18-250BZXI,CY7C1512KV18250BZXI CY 400 In Stock

Description and Introduction

72-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1512KV18-250BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Density**: 18 Mb (1M x 18)
- **Organization**: 1,048,576 words × 18 bits
- **Speed**: 250 MHz (4 ns clock-to-output)
- **Voltage Supply**: 1.8V ±0.1V (core and I/O)
- **Interface**: Synchronous pipelined with ZQ (impedance calibration)
- **Operating Temperature**: Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array)
- **Features**: 
  - Supports burst operations (linear/interleaved)
  - On-die termination (ODT)
  - Echo clock (CQ/CQ#) for data capture
  - Byte-wise write control
  - JTAG boundary scan (IEEE 1149.1 compliant)
  - Cycle latency: 2 (pipelined mode)

This device is designed for high-speed networking, telecommunications, and other performance-critical applications.

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