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CY7C1460AV33-200AXC from CYPRESS

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CY7C1460AV33-200AXC

Manufacturer: CYPRESS

36-Mbit (1 M ?36/2 M ?18) Pipelined SRAM with NoBL?Architecture

Partnumber Manufacturer Quantity Availability
CY7C1460AV33-200AXC,CY7C1460AV33200AXC CYPRESS 190 In Stock

Description and Introduction

36-Mbit (1 M ?36/2 M ?18) Pipelined SRAM with NoBL?Architecture The CY7C1460AV33-200AXC is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

1. **Memory Size**: 4 Mbit (256K x 16)
2. **Organization**: 256K words × 16 bits
3. **Voltage Supply**: 3.3V (VDD)
4. **Speed**: 200 MHz (5 ns access time)
5. **Interface**: Synchronous (pipelined)
6. **I/O Type**: Common I/O (separate input and output)
7. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
8. **Package**: 100-pin TQFP (Thin Quad Flat Pack)
9. **Cycle Time**: 5 ns (200 MHz operation)
10. **Features**:
    - Burst mode operation (linear or interleaved)
    - Byte write capability
    - ZZ (sleep mode) for power saving
    - JTAG boundary scan support
    - 3.3V I/O (LVTTL-compatible)
11. **Applications**: Networking, telecommunications, and high-performance computing systems.  

This SRAM is designed for high-speed data transfer and low-power operation in demanding applications.

Partnumber Manufacturer Quantity Availability
CY7C1460AV33-200AXC,CY7C1460AV33200AXC CY 40 In Stock

Description and Introduction

36-Mbit (1 M ?36/2 M ?18) Pipelined SRAM with NoBL?Architecture The CY7C1460AV33-200AXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are the key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 4 Mb (256K x 18)  
3. **Voltage Supply**: 3.3V  
4. **Speed**: 200 MHz (5 ns access time)  
5. **Organization**: 256K words × 18 bits  
6. **I/O Type**: Common I/O (separate input/output pins)  
7. **Operating Temperature**: Commercial (0°C to +70°C)  
8. **Package**: 100-ball TQFP (Thin Quad Flat Pack)  
9. **Data Retention**: Typical standby current for data retention  
10. **Features**:  
   - Burst mode operation  
   - Byte write capability  
   - Single-cycle deselect  
   - JTAG boundary scan  

This SRAM is designed for high-speed applications requiring low latency and high bandwidth.

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