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CY7C1425KV18250BZXC from CYPRESS

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15.625ms

CY7C1425KV18250BZXC

Manufacturer: CYPRESS

36-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1425KV18250BZXC CYPRESS 10 In Stock

Description and Introduction

36-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1425KV18250BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Below are its key specifications:

1. **Memory Size**: 18 Mb (1M x 18 bits)  
2. **Organization**: 1,048,576 words × 18 bits  
3. **Speed**: 250 MHz (4 ns clock-to-output)  
4. **Voltage Supply**: 1.8V (core) and 1.5V/1.8V (I/O)  
5. **Interface**: Synchronous, pipelined with ZQ calibration  
6. **Package**: 165-ball BGA (Ball Grid Array)  
7. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
8. **Features**:  
   - Burst modes: Linear or interleaved  
   - Byte write control  
   - On-die termination (ODT)  
   - Echo clock (CQ/CQ#) for data capture  
   - JTAG boundary scan (IEEE 1149.1 compliant)  

9. **Applications**: Networking, telecommunications, and high-speed computing systems.  

For exact details, refer to the official datasheet from Cypress/Infineon.

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