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CY7C1425JV18-250BZC from CYPRESS

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CY7C1425JV18-250BZC

Manufacturer: CYPRESS

36-Mbit QDR?-II SRAM 2-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1425JV18-250BZC,CY7C1425JV18250BZC CYPRESS 50 In Stock

Description and Introduction

36-Mbit QDR?-II SRAM 2-Word Burst Architecture The CY7C1425JV18-250BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 72-Mbit (4M x 18)  
3. **Speed**: 250 MHz  
4. **Voltage Supply**: 1.8V  
5. **Operating Temperature**: Commercial (0°C to +70°C)  
6. **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
7. **I/O Type**: HSTL (High-Speed Transceiver Logic)  
8. **Burst Mode**: Supports linear and interleaved burst sequences  
9. **Access Time**: 3.6 ns (max)  
10. **Cycle Time**: 4.0 ns (max)  
11. **Features**:  
   - Byte Write capability  
   - On-chip address and data pipeline registers  
   - Single-cycle deselect  
   - JTAG boundary scan support  
   - ZZ (sleep mode) for power savings  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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