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CY7C14251KV18-250BZI from CY,Cypress

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CY7C14251KV18-250BZI

Manufacturer: CY

36-Mbit QDR? II SRAM 2-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C14251KV18-250BZI,CY7C14251KV18250BZI CY 60 In Stock

Description and Introduction

36-Mbit QDR? II SRAM 2-Word Burst Architecture The CY7C14251KV18-250BZI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 18 Mbit (1M x 18)  
- **Speed**: 250 MHz (4 ns clock-to-data access)  
- **Voltage Supply**: 1.8V (VDD) ±5%, with HSTL I/O  
- **Organization**: 1,048,576 words x 18 bits  
- **Package**: 165-ball BGA (Ball Grid Array), 13mm x 15mm  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Operating Temperature**: Industrial (-40°C to +85°C)  
- **Features**:  
  - Byte Write capability (Upper/Lower byte control)  
  - Single-cycle deselect for reduced power  
  - Echo clock for data capture  
  - JTAG boundary scan (IEEE 1149.1 compliant)  
  - On-chip address and data pipelining  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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