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CY7C1424KV18-250BZC from CY,Cypress

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CY7C1424KV18-250BZC

Manufacturer: CY

36-Mbit DDR II SIO SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1424KV18-250BZC,CY7C1424KV18250BZC CY 4 In Stock

Description and Introduction

36-Mbit DDR II SIO SRAM Two-Word Burst Architecture The CY7C1424KV18-250BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies).  

### Key Specifications:  
- **Density**: 72-Mbit (4M x 18)  
- **Speed**: 250 MHz  
- **Organization**: 4,194,304 words × 18 bits  
- **Supply Voltage**: 1.8V (core), 1.5V (I/O)  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Package**: 165-ball FBGA (13mm × 15mm)  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Features**:  
  - Pipelined operation for high-speed applications  
  - Byte write capability  
  - On-chip address and control registers  
  - JTAG boundary scan support  
  - Single-cycle deselect for reduced power consumption  

This SRAM is designed for networking, telecommunications, and high-performance computing applications.  

(Source: Cypress Semiconductor datasheet)

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