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CY7C1415KV18-250BZXC from CY,Cypress

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CY7C1415KV18-250BZXC

Manufacturer: CY

36-Mbit QDR?II SRAM Four-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1415KV18-250BZXC,CY7C1415KV18250BZXC CY 9 In Stock

Description and Introduction

36-Mbit QDR?II SRAM Four-Word Burst Architecture The CY7C1415KV18-250BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are the key specifications:

- **Density**: 36 Mb (2M x 18)  
- **Speed**: 250 MHz  
- **Voltage Supply**: 1.8V (VDD) ±5%  
- **I/O Voltage**: 1.8V (VDDQ)  
- **Organization**: 2,097,152 words × 18 bits  
- **Interface**: Synchronous (ZBT™ or NoBL™ operation)  
- **Access Time**: 3.6 ns (clock-to-output)  
- **Cycle Time**: 4.0 ns  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Package**: 165-ball FBGA (13mm × 15mm)  
- **Features**:  
  - Pipelined and flow-through operation  
  - Byte write control (×18)  
  - JTAG boundary scan  
  - On-chip address and control registers  
  - Single-cycle deselect  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.  

(Source: Cypress Semiconductor datasheet)

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