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CY7C1415KV18-250BZI from CY,Cypress

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CY7C1415KV18-250BZI

Manufacturer: CY

36-Mbit QDR?II SRAM Four-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1415KV18-250BZI,CY7C1415KV18250BZI CY 3 In Stock

Description and Introduction

36-Mbit QDR?II SRAM Four-Word Burst Architecture The CY7C1415KV18-250BZI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies).  

### Key Specifications:  
- **Type**: Synchronous Pipelined SRAM  
- **Density**: 18 Mb (1M x 18)  
- **Speed**: 250 MHz  
- **Operating Voltage**: 1.8V  
- **I/O Voltage**: 1.8V (LVCMOS)  
- **Package**: 165-ball BGA (Ball Grid Array)  
- **Temperature Range**: Industrial (-40°C to +85°C)  
- **Organization**: 1,048,576 words × 18 bits  
- **Access Time**: 3.6 ns (max)  
- **Cycle Time**: 4.0 ns (max)  
- **Features**:  
  - Supports burst mode operations  
  - Byte write control  
  - Single-cycle deselect  
  - JTAG boundary scan (IEEE 1149.1 compliant)  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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