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CY7C1414KV18-250BZXC from CY,Cypress

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15.625ms

CY7C1414KV18-250BZXC

Manufacturer: CY

36-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1414KV18-250BZXC,CY7C1414KV18250BZXC CY 25 In Stock

Description and Introduction

36-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1414KV18-250BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 72-Mbit (4M x 18)  
3. **Speed**: 250 MHz  
4. **Access Time**: 3.6 ns  
5. **Voltage Supply**: 1.8V (VDD) ±5%  
6. **I/O Voltage**: 1.5V (VDDQ) ±5%  
7. **Organization**: 4,194,304 words × 18 bits  
8. **Interface**: HSTL (High-Speed Transceiver Logic)  
9. **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
10. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
11. **Features**:  
   - Byte Write capability  
   - Burst mode operation  
   - Single-cycle deselect  
   - JTAG boundary scan support  
   - On-chip address and data pipeline registers  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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