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CY7C1412KV18-300BZXI from CY,Cypress

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CY7C1412KV18-300BZXI

Manufacturer: CY

36-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1412KV18-300BZXI,CY7C1412KV18300BZXI CY 4 In Stock

Description and Introduction

36-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1412KV18-300BZXI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 72 Mbit (organized as 4M x 18)  
- **Speed**: 300 MHz (3.3 ns clock cycle)  
- **Voltage Supply**: 1.8V (VDD) core, 1.5V/1.8V (VDDQ) I/O  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Package**: 165-ball BGA (Ball Grid Array)  
- **Operating Temperature**: Industrial (-40°C to +85°C)  
- **Features**:  
  - Byte Write capability  
  - Burst mode operation  
  - On-chip address and data pipeline registers  
  - JTAG boundary scan support  
  - Single-cycle deselect  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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