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CY7C1412KV18-300BZXC from CY,Cypress

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CY7C1412KV18-300BZXC

Manufacturer: CY

36-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1412KV18-300BZXC,CY7C1412KV18300BZXC CY 11 In Stock

Description and Introduction

36-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1412KV18-300BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are the key specifications:

1. **Type**: Synchronous Pipelined SRAM  
2. **Density**: 36 Mb (2M x 18)  
3. **Speed**: 300 MHz (3.3 ns clock-to-data access)  
4. **Voltage Supply**: 1.8V (core), 1.5V/1.8V (I/O)  
5. **Organization**: 2,097,152 words × 18 bits  
6. **Interface**: HSTL (High-Speed Transceiver Logic)  
7. **Package**: 165-ball FBGA (Fine-pitch Ball Grid Array)  
8. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
9. **Features**:  
   - Burst modes: Linear or Interleaved  
   - On-chip address and control registers  
   - Single-cycle deselect  
   - JTAG boundary scan support  
   - ZZ (sleep mode) for power saving  

10. **Applications**: Networking, telecommunications, and high-speed computing systems.  

For exact details, refer to the official datasheet from Infineon/Cypress.

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