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CY7C1412KV18-250BZC from CYPRESS

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CY7C1412KV18-250BZC

Manufacturer: CYPRESS

36-Mbit QDR?II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1412KV18-250BZC,CY7C1412KV18250BZC CYPRESS 20 In Stock

Description and Introduction

36-Mbit QDR?II SRAM Two-Word Burst Architecture The CY7C1412KV18-250BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

- **Density**: 72-Mbit (4M x 18)
- **Organization**: 4,194,304 words × 18 bits
- **Supply Voltage**: 1.7V to 1.9V (core), 1.7V to 1.9V (I/O)
- **Speed**: 250 MHz (4.0 ns clock-to-data access)
- **Interface**: Synchronous, pipelined
- **Operating Temperature Range**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array)
- **Cycle Time**: 4.0 ns
- **Data Retention**: Typical standby current (ISB2) ≤ 25 mA
- **Features**: 
  - Supports burst mode operations
  - JTAG boundary scan
  - On-chip address and data pipeline registers
  - ZZ (Sleep Mode) for power savings
  - Single-cycle deselect capability
  - 3.3V or 2.5V I/O compatibility (LVCMOS)

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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