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CY7C1412BV18-200BZI from CYPRESS

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CY7C1412BV18-200BZI

Manufacturer: CYPRESS

36-Mbit QDR-II SRAM 2-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1412BV18-200BZI,CY7C1412BV18200BZI CYPRESS 327 In Stock

Description and Introduction

36-Mbit QDR-II SRAM 2-Word Burst Architecture The CY7C1412BV18-200BZI is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

1. **Density**: 18 Mb (1M x 18)  
2. **Speed**: 200 MHz  
3. **Voltage Supply**: 1.8V  
4. **Organization**: 1,048,576 words × 18 bits  
5. **Interface**: Synchronous with pipelined operation  
6. **Operating Temperature Range**: Industrial (-40°C to +85°C)  
7. **Package**: 165-ball BGA (Ball Grid Array)  
8. **Cycle Time**: 5 ns  
9. **Access Time**: 3.5 ns  
10. **I/O Type**: LVCMOS  
11. **Burst Modes**: Supports linear and interleaved burst sequences  
12. **Power Consumption**: Low power operation with standby and sleep modes  

This SRAM is designed for high-speed networking, telecommunications, and other performance-critical applications.

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