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CY7C1371C-117BGC from CY,Cypress

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CY7C1371C-117BGC

Manufacturer: CY

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture

Partnumber Manufacturer Quantity Availability
CY7C1371C-117BGC,CY7C1371C117BGC CY 10 In Stock

Description and Introduction

18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture The CY7C1371C-117BGC is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are the key specifications:

1. **Memory Size**: 4 Mbit (256K x 18 bits)  
2. **Organization**: 262,144 words x 18 bits  
3. **Speed**: 117 MHz (8.5 ns access time)  
4. **Voltage Supply**: 3.3V (VDD = 3.3V ± 0.3V)  
5. **I/O Voltage**: 3.3V (VDDQ = 3.3V ± 0.3V)  
6. **Package**: 119-ball BGA (Ball Grid Array)  
7. **Operating Temperature**: Commercial (0°C to +70°C)  
8. **Interface**: Synchronous with pipelined operation  
9. **Features**:  
   - Single-cycle deselect  
   - Byte write control  
   - Burst mode operation (linear or interleaved)  
   - JTAG boundary scan support  
   - ZZ sleep mode for power saving  
10. **Pin Count**: 119  
11. **Technology**: CMOS  

This SRAM is designed for high-performance networking, telecommunications, and computing applications.

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