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CY7C1318KV18-250BZXC from CY,Cypress

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CY7C1318KV18-250BZXC

Manufacturer: CY

18-Mbit DDR II SRAM Two-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1318KV18-250BZXC,CY7C1318KV18250BZXC CY 5 In Stock

Description and Introduction

18-Mbit DDR II SRAM Two-Word Burst Architecture The CY7C1318KV18-250BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies).  

**Key Specifications:**  
- **Type:** Synchronous Pipelined SRAM  
- **Density:** 18-Mbit (1M x 18)  
- **Speed:** 250 MHz  
- **Voltage Supply:** 1.8V  
- **Organization:** 1,048,576 words x 18 bits  
- **Package:** 165-ball BGA (Ball Grid Array)  
- **Operating Temperature:** Commercial (0°C to +70°C) or Industrial (-40°C to +85°C) depending on variant  
- **I/O Type:** HSTL (High-Speed Transceiver Logic)  
- **Features:**  
  - Pipelined operation for high-speed applications  
  - Byte Write capability  
  - Single-cycle deselect  
  - Echo clocks for simplified data capture  
  - JTAG boundary scan (IEEE 1149.1 compliant)  

This SRAM is designed for networking, telecommunications, and high-performance computing applications.  

(Note: Always verify datasheet details from the manufacturer for the latest specifications.)

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