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CY7C1315KV18-333BZC from CY,Cypress

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CY7C1315KV18-333BZC

Manufacturer: CY

18-Mbit QDR?II SRAM Four-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1315KV18-333BZC,CY7C1315KV18333BZC CY 3 In Stock

Description and Introduction

18-Mbit QDR?II SRAM Four-Word Burst Architecture The CY7C1315KV18-333BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 18-Mbit (1M x 18)  
3. **Speed**: 333 MHz (3.0 ns clock-to-output)  
4. **Operating Voltage**: 1.8V (VDD)  
5. **I/O Voltage**: 1.8V (VDDQ)  
6. **Organization**: 1,048,576 words x 18 bits  
7. **Interface**: HSTL (High-Speed Transceiver Logic)  
8. **Package**: 165-ball FBGA (13mm x 15mm)  
9. **Temperature Range**: Commercial (0°C to +70°C)  
10. **Features**:  
   - Pipelined operation for high-speed performance  
   - Single-cycle deselect for reduced power consumption  
   - Byte write control  
   - JTAG boundary scan support  
   - On-chip address and data pipeline registers  

11. **Applications**: Networking, telecommunications, and high-performance computing systems.  

This information is based on the manufacturer's datasheet. For detailed technical specifications, refer to the official documentation.

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