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CY7C1313AV18-250BZC from CYPRESS

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CY7C1313AV18-250BZC

Manufacturer: CYPRESS

18-Mb QDR(TM)-II SRAM 4-Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1313AV18-250BZC,CY7C1313AV18250BZC CYPRESS 126 In Stock

Description and Introduction

18-Mb QDR(TM)-II SRAM 4-Word Burst Architecture The CY7C1313AV18-250BZC is a high-performance 18-Mbit pipelined synchronous SRAM manufactured by Cypress Semiconductor. Below are its key specifications:

1. **Density**: 18 Mbit (1M x 18)  
2. **Organization**: 1,048,576 words × 18 bits  
3. **Speed**: 250 MHz (4.0 ns clock-to-data access)  
4. **Voltage Supply**: 1.8V (VDD) core, 1.5V (VDDQ) I/O  
5. **Interface**: Synchronous (pipelined)  
6. **Cycle Time**: 4.0 ns  
7. **Operating Temperature**: Commercial (0°C to +70°C)  
8. **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
9. **Data Retention**: Low-power standby mode supported  
10. **Features**:  
   - Burst modes: Linear or interleaved  
   - On-chip address and data pipeline registers  
   - Byte write capability  
   - JTAG boundary scan support  
   - ZZ sleep mode for power saving  

This SRAM is designed for high-speed networking, telecommunications, and other applications requiring fast data access.

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