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CY7C1312BV18-200BZXC from CY,Cypress

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CY7C1312BV18-200BZXC

Manufacturer: CY

18-Mbit QDR?-II SRAM 2 Word Burst Architecture

Partnumber Manufacturer Quantity Availability
CY7C1312BV18-200BZXC,CY7C1312BV18200BZXC CY 13 In Stock

Description and Introduction

18-Mbit QDR?-II SRAM 2 Word Burst Architecture The CY7C1312BV18-200BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Type**: 2.5V Synchronous Pipelined SRAM  
- **Density**: 4Mb (256K x 18)  
- **Speed**: 200 MHz  
- **Operating Voltage**: 2.5V ±5% (VDD)  
- **I/O Voltage**: 1.8V (VDDQ)  
- **Access Time**: 3.5 ns (clock-to-data)  
- **Organization**: 256K words × 18 bits  
- **Package**: 165-ball FBGA (Fine-pitch Ball Grid Array)  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Operating Temperature**: Commercial (0°C to +70°C)  
- **Features**:  
  - Pipelined operation for high bandwidth  
  - Byte write control  
  - Single-cycle deselect  
  - Echo clocks for data capture  
  - JTAG boundary scan (IEEE 1149.1)  

This SRAM is designed for networking, telecommunications, and high-speed computing applications.  

(Source: Cypress Semiconductor datasheet)

Partnumber Manufacturer Quantity Availability
CY7C1312BV18-200BZXC,CY7C1312BV18200BZXC 83 In Stock

Description and Introduction

18-Mbit QDR?-II SRAM 2 Word Burst Architecture The CY7C1312BV18-200BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 2 Mbit (128K x 18)  
- **Speed**: 200 MHz  
- **Operating Voltage**: 1.8V  
- **I/O Voltage**: 1.8V (HSTL-compatible)  
- **Organization**: 128K words × 18 bits  
- **Access Time**: 3.5 ns (clock-to-data)  
- **Cycle Time**: 5 ns  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Package**: 165-ball FBGA (Fine-Pitch Ball Grid Array)  
- **Operating Temperature**: Commercial (0°C to +70°C)  
- **Features**:  
  - Pipelined operation for high-speed performance  
  - Single-cycle deselect for reduced power consumption  
  - Burst mode support (linear or interleaved)  
  - JTAG boundary scan (IEEE 1149.1 compliant)  
  - On-chip address and data pipeline registers  

This SRAM is designed for applications requiring high-speed data access, such as networking, telecommunications, and high-performance computing.

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