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CY7C1268KV18-550BZXC from CY,Cypress

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CY7C1268KV18-550BZXC

Manufacturer: CY

36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1268KV18-550BZXC,CY7C1268KV18550BZXC CY 3 In Stock

Description and Introduction

36-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) The CY7C1268KV18-550BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies).  

### Key Specifications:  
- **Type**: Synchronous Pipelined SRAM  
- **Density**: 72-Mbit (4M x 18)  
- **Speed**: 550 MHz  
- **Voltage Supply**: 1.8V (VDD)  
- **I/O Voltage**: 1.8V (VDDQ)  
- **Organization**: 4,194,304 words × 18 bits  
- **Package**: 165-ball BGA (Ball Grid Array)  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C), depending on variant  
- **Features**:  
  - Pipelined operation for high-speed applications  
  - Single-cycle deselect for reduced power consumption  
  - Byte-wide write control  
  - JTAG boundary scan support  
  - ZZ (sleep mode) for power savings  

This SRAM is commonly used in networking, telecommunications, and high-performance computing applications.  

For exact details, refer to the official datasheet from Infineon/Cypress.

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