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CY7C1263KV18-400BZC from CY,Cypress

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CY7C1263KV18-400BZC

Manufacturer: CY

36-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1263KV18-400BZC,CY7C1263KV18400BZC CY 6 In Stock

Description and Introduction

36-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) The CY7C1263KV18-400BZC is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Density**: 36 Mb (1M × 36)
- **Organization**: 1,048,576 words × 36 bits
- **Voltage Supply**: 1.7V to 1.9V (nominal 1.8V)
- **Speed**: 400 MHz (2.5 ns clock cycle)
- **Access Time**: 2.5 ns
- **I/O Type**: HSTL (High-Speed Transceiver Logic)
- **Interface**: Synchronous pipelined
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Package**: 165-ball BGA (Ball Grid Array), 13mm × 15mm
- **Features**: 
  - Supports burst and linear addressing modes
  - On-chip address and data pipelining
  - ZZ (sleep mode) for power saving
  - JTAG boundary scan (IEEE 1149.1 compliant)
  - Single-cycle deselect feature

This SRAM is designed for high-performance networking and telecommunications applications.

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