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CY7C12451KV18-400BZXC from CY,Cypress

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CY7C12451KV18-400BZXC

Manufacturer: CY

36-Mbit QDR? II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C12451KV18-400BZXC,CY7C12451KV18400BZXC CY 150 In Stock

Description and Introduction

36-Mbit QDR? II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) The CY7C12451KV18-400BZXC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now Infineon Technologies). Here are its key specifications:

- **Type**: Synchronous Pipelined SRAM  
- **Density**: 36 Mb (1M x 36)  
- **Speed**: 400 MHz (2.5 ns clock cycle)  
- **Voltage Supply**: 1.8V (VDD) ±5%  
- **I/O Voltage**: 1.5V (VDDQ) ±5%  
- **Organization**: 1,048,576 words × 36 bits  
- **Package**: 165-ball FBGA (Fine-pitch Ball Grid Array)  
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
- **Interface**: HSTL (High-Speed Transceiver Logic)  
- **Features**:  
  - Byte Write capability  
  - Burst and Linear addressing modes  
  - ZZ (Sleep) mode for power saving  
  - JTAG boundary scan support  
  - Single-cycle deselect  

This device is designed for high-speed networking, telecommunications, and other performance-critical applications.  

(Source: Cypress/Infineon datasheet for CY7C12451KV18-400BZXC)

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