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CY7C1243KV18-450BZC from CY,Cypress

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CY7C1243KV18-450BZC

Manufacturer: CY

36-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1243KV18-450BZC,CY7C1243KV18450BZC CY 3 In Stock

Description and Introduction

36-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) The CY7C1243KV18-450BZC is a high-performance synchronous pipelined SRAM manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

1. **Memory Type**: Synchronous Pipelined SRAM  
2. **Density**: 36 Mb (1M x 36)  
3. **Speed**: 450 MHz  
4. **Operating Voltage**: 1.8V ±5% (VDD)  
5. **I/O Voltage**: 1.5V (HSTL compatible)  
6. **Organization**: 1,048,576 words × 36 bits  
7. **Access Time**: 2.2 ns (maximum)  
8. **Cycle Time**: 2.2 ns  
9. **Interface**: HSTL (High-Speed Transceiver Logic)  
10. **Package**: 165-ball FBGA (13mm × 15mm)  
11. **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)  
12. **Features**:  
   - Pipelined operation for high-speed applications  
   - Byte-wise write control  
   - Single-cycle deselect  
   - Echo clocks for data capture  
   - JTAG boundary scan (IEEE 1149.1 compliant)  

This SRAM is designed for networking, telecommunications, and high-performance computing applications.

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