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CY7C1243KV18-400BZC from CY,Cypress

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31.250ms

CY7C1243KV18-400BZC

Manufacturer: CY

36-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

Partnumber Manufacturer Quantity Availability
CY7C1243KV18-400BZC,CY7C1243KV18400BZC CY 3 In Stock

Description and Introduction

36-Mbit QDR?II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) The CY7C1243KV18-400BZC is a high-speed synchronous pipelined SRAM manufactured by Cypress Semiconductor (now Infineon Technologies). Here are its key specifications:

- **Density**: 72-Mbit (4M x 18)
- **Speed**: 400 MHz (2.5 ns clock-to-data access)
- **Voltage Supply**: 1.7V to 1.9V (nominal 1.8V)
- **Organization**: 4,194,304 words × 18 bits
- **Interface**: Synchronous with ZQ (impedance calibration) and QVLD (data valid indicator)
- **Package**: 165-ball FBGA (13mm × 15mm)
- **Operating Temperature**: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
- **Features**: 
  - Pipelined operation for high bandwidth
  - Double Data Rate (DDR) interface
  - On-chip termination (OCT) for signal integrity
  - JTAG boundary scan (IEEE 1149.1 compliant)
  - Burst modes: Sequential or Interleaved

This device is designed for networking, telecommunications, and high-performance computing applications.

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