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CY62137CV30LL-70BVI from CRY

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CY62137CV30LL-70BVI

Manufacturer: CRY

Memory : MicroPower SRAMs

Partnumber Manufacturer Quantity Availability
CY62137CV30LL-70BVI,CY62137CV30LL70BVI CRY 140 In Stock

Description and Introduction

Memory : MicroPower SRAMs The CY62137CV30LL-70BVI is a SRAM (Static Random Access Memory) device manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:  

- **Density**: 4 Mbit (organized as 512K × 8 bits)  
- **Voltage Supply**: 2.7V to 3.6V  
- **Speed**: 70 ns access time  
- **Operating Temperature**: Industrial (-40°C to +85°C)  
- **Package**: 48-ball VFBGA (Very Fine Pitch Ball Grid Array)  
- **Interface**: Parallel  
- **Standby Current**: Low power consumption in standby mode  
- **Data Retention**: Supported at reduced voltage  

This SRAM is designed for applications requiring high-speed, low-power, and reliable non-volatile memory.

Partnumber Manufacturer Quantity Availability
CY62137CV30LL-70BVI,CY62137CV30LL70BVI CY 5259 In Stock

Description and Introduction

Memory : MicroPower SRAMs The CY62137CV30LL-70BVI is a 1M x 8 Static RAM (SRAM) manufactured by Cypress Semiconductor (now part of Infineon Technologies). Here are its key specifications:

- **Density**: 8Mb (1M x 8-bit)
- **Voltage Supply**: 2.7V to 3.6V (3V operation)
- **Access Time**: 70ns
- **Operating Current**: 12mA (typical)
- **Standby Current**: 4µA (typical, CMOS standby)
- **Package**: 48-ball VFBGA (6mm x 8mm)
- **Temperature Range**: Industrial (-40°C to +85°C)
- **Interface**: Parallel
- **Organization**: 1,048,576 words x 8 bits
- **Data Retention**: >10 years at 85°C
- **Technology**: High-speed CMOS

This SRAM is designed for low-power, high-performance applications.

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