MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE # Technical Datasheet: CR6PM Schottky Barrier Diode
## 1. Application Scenarios
### Typical Use Cases
The CR6PM is a surface-mount Schottky barrier diode primarily employed in high-frequency rectification and reverse polarity protection circuits. Its low forward voltage drop (typically 0.38V at 1A) makes it ideal for applications where minimizing power loss is critical. Common implementations include:
- DC-DC converter output rectification in switch-mode power supplies (SMPS) operating up to 1MHz
- Freewheeling diode in inductive load switching circuits (relay drivers, motor controllers)
- OR-ing diode in redundant power supply configurations
- Signal demodulation in RF communication modules up to 2.4GHz
### Industry Applications
- Consumer Electronics : Smartphone charging circuits, laptop power adapters, and USB-PD implementations
- Automotive : LED lighting drivers, infotainment system power management (non-critical ECUs)
- Telecommunications : Base station power rectification, PoE (Power over Ethernet) equipment
- Industrial Control : PLC I/O protection, sensor interface circuits with reverse voltage protection
### Practical Advantages and Limitations
Advantages:
- Low forward voltage reduces conduction losses by 40-60% compared to standard PN junction diodes
- Fast recovery time (<10ns) enables efficient high-frequency switching without significant reverse recovery losses
- High surge current capability (30A peak) provides robust transient protection
- Compact SMA package (DO-214AC) saves board space while maintaining good thermal characteristics
Limitations:
- Higher reverse leakage current (typically 100µA at 25°C, doubling every 10°C rise) limits high-temperature operation
- Lower maximum reverse voltage (60V) restricts use in high-voltage applications
- Thermal sensitivity requires careful thermal management at currents above 3A continuous
- ESD sensitivity (Class 1C, 500V HBM) necessitates proper handling during assembly
## 2. Design Considerations
### Common Design Pitfalls and Solutions
Pitfall 1: Thermal Runaway in Parallel Configurations
- Issue : Uneven current sharing due to negative temperature coefficient of forward voltage
- Solution : Implement individual current-balancing resistors (10-50mΩ) or use single higher-rated diode
Pitfall 2: High-Frequency Ringing
- Issue : Parasitic inductance (typically 2-5nH) interacting with junction capacitance causes oscillation during switching
- Solution : Add snubber network (RC circuit with 10-100Ω and 100pF-1nF) close to diode terminals
Pitfall 3: Reverse Recovery Current Spikes
- Issue : Although minimal, residual reverse recovery can cause EMI in sensitive analog circuits
- Solution : Implement ferrite beads or small series inductors (10-100nH) in line with diode
### Compatibility Issues with Other Components
With MOSFETs:
- Gate driver circuits : CR6PM's low capacitance (15pF typical) prevents excessive loading of gate drive
- Synchronous rectification : Compatible with most MOSFETs having Vgs(th) <2.5V, but requires dead-time optimization
With Microcontrollers:
- ADC reference circuits : Reverse leakage current may affect precision measurements below 1mV
- GPIO protection : Excellent for digital I/O protection up to 60V transients
With Passive Components:
- Electrolytic capacitors : Low ESR (<20mΩ) capacitors recommended to handle high di/dt
- Inductors : Ferrite core inductors preferred over powdered iron for reduced core
