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CMT08N50 from CMT

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CMT08N50

Manufacturer: CMT

POWER FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
CMT08N50 CMT 47 In Stock

Description and Introduction

POWER FIELD EFFECT TRANSISTOR The CMT08N50 is a power MOSFET manufactured by CMT. Here are its key specifications:

- **Type**: N-channel MOSFET  
- **Drain-Source Voltage (VDSS)**: 500V  
- **Continuous Drain Current (ID)**: 8A  
- **Pulsed Drain Current (IDM)**: 32A  
- **Power Dissipation (PD)**: 125W  
- **Gate-Source Voltage (VGS)**: ±30V  
- **On-Resistance (RDS(on))**: 0.85Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th))**: 2-4V  
- **Input Capacitance (Ciss)**: 800pF (typical)  
- **Output Capacitance (Coss)**: 150pF (typical)  
- **Reverse Transfer Capacitance (Crss)**: 25pF (typical)  
- **Turn-On Delay Time (td(on))**: 12ns (typical)  
- **Turn-Off Delay Time (td(off))**: 50ns (typical)  
- **Package**: TO-220  

These specifications are based on standard operating conditions (Tj = 25°C unless noted).

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