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C5707

High Current Switching Applications

Partnumber Manufacturer Quantity Availability
C5707 93 In Stock

Description and Introduction

High Current Switching Applications The part C5707 is a transistor manufactured by Toshiba. Here are its specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Use**: High-speed switching and amplification
- **Collector-Base Voltage (VCBO)**: 50V
- **Collector-Emitter Voltage (VCEO)**: 50V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 100mA
- **Total Power Dissipation (PT)**: 300mW
- **Junction Temperature (Tj)**: 125°C
- **Storage Temperature (Tstg)**: -55°C to +150°C
- **Transition Frequency (fT)**: 50MHz (min)
- **Collector Capacitance (CC)**: 2.5pF (max)
- **Package**: TO-92 (also available in SOT-23 for surface mount)

These are the key specifications for the C5707 transistor as provided by Toshiba.

Partnumber Manufacturer Quantity Availability
C5707 SANYO 21000 In Stock

Description and Introduction

High Current Switching Applications The part C5707 is a transistor manufactured by SANYO. Here are its specifications:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Usage**: Designed for high-speed switching applications
- **Collector-Base Voltage (VCBO)**: 60V
- **Collector-Emitter Voltage (VCEO)**: 50V
- **Emitter-Base Voltage (VEBO)**: 5V
- **Collector Current (IC)**: 0.5A
- **Total Power Dissipation (PT)**: 0.625W
- **Junction Temperature (Tj)**: 150°C
- **Transition Frequency (fT)**: 50MHz
- **Package**: TO-92

These specifications are based on the datasheet provided by SANYO for the C5707 transistor.

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