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C30T10Q from NIEC

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15.625ms

C30T10Q

Manufacturer: NIEC

Schottky Barrier Diode

Partnumber Manufacturer Quantity Availability
C30T10Q NIEC 5500 In Stock

Description and Introduction

Schottky Barrier Diode The part C30T10Q is manufactured by NIEC (Nippon International Electronics Corporation). Below are the specifications based on Ic-phoenix technical data files:  

- **Type**: Thyristor (SCR - Silicon Controlled Rectifier)  
- **Voltage Rating (VDRM/VRRM)**: 300V  
- **Current Rating (IT(RMS))**: 10A  
- **Gate Trigger Current (IGT)**: 5mA (typical)  
- **Gate Trigger Voltage (VGT)**: 1.5V (typical)  
- **On-State Voltage Drop (VTM)**: 1.7V (typical at rated current)  
- **Holding Current (IH)**: 5mA (typical)  
- **Package**: TO-220AB (isolated tab)  

These are the confirmed specifications for the NIEC C30T10Q thyristor. No additional details or recommendations are provided.

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