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BC212LB from FSC,Fairchild Semiconductor

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15.625ms

BC212LB

Manufacturer: FSC

0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200

Partnumber Manufacturer Quantity Availability
BC212LB FSC 3160 In Stock

Description and Introduction

0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 **Introduction to the BC212LB Transistor by Fairchild Semiconductor**  

The BC212LB is a general-purpose PNP bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Manufactured by Fairchild Semiconductor, this component is known for its reliability and consistent performance in various electronic circuits.  

With a collector-emitter voltage (VCE) rating of -30V and a collector current (IC) of -100mA, the BC212LB is suitable for small-signal amplification, audio stages, and driver circuits. Its low noise and high current gain (hFE) make it particularly useful in preamplifier and signal-processing applications.  

Housed in a TO-92 package, the BC212LB is compact and easy to integrate into circuit designs. Its complementary NPN counterpart, the BC182LB, allows for flexible circuit configurations when paired together. Engineers and hobbyists favor this transistor for its stable characteristics and compatibility with a wide range of operating conditions.  

Fairchild Semiconductor's BC212LB remains a dependable choice for designers seeking a cost-effective, high-performance PNP transistor for low-voltage applications. Its straightforward specifications and robust construction ensure long-term usability in both commercial and experimental projects.

Partnumber Manufacturer Quantity Availability
BC212LB FAIRCHILD 400 In Stock

Description and Introduction

0.350W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 The BC212LB is a PNP silicon epitaxial planar transistor manufactured by Fairchild Semiconductor. Here are its key specifications:

- **Type**: PNP
- **Material**: Silicon
- **Structure**: Epitaxial planar
- **Collector-Emitter Voltage (VCEO)**: -30V
- **Collector-Base Voltage (VCBO)**: -30V
- **Emitter-Base Voltage (VEBO)**: -5V
- **Collector Current (IC)**: -100mA
- **Power Dissipation (PD)**: 300mW
- **DC Current Gain (hFE)**: 100-630 (at IC = -2mA, VCE = -5V)
- **Transition Frequency (fT)**: 100MHz (min)
- **Operating Temperature Range**: -65°C to +150°C

The BC212LB is designed for general-purpose amplification and switching applications.

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