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BAS125-06 from Infineon

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BAS125-06

Manufacturer: Infineon

RF Schottky Diode

Partnumber Manufacturer Quantity Availability
BAS125-06,BAS12506 Infineon 51032 In Stock

Description and Introduction

RF Schottky Diode The BAS125-06 is a Schottky diode manufactured by Infineon. Here are its key specifications:  

- **Type**: Schottky Barrier Diode  
- **Package**: SOT-23  
- **Maximum Reverse Voltage (VRRM)**: 25 V  
- **Average Forward Current (IF(AV))**: 0.2 A  
- **Peak Forward Surge Current (IFSM)**: 1 A  
- **Forward Voltage (VF)**: 0.38 V (at 0.1 A)  
- **Reverse Leakage Current (IR)**: 0.2 µA (at 25 V)  
- **Operating Junction Temperature (Tj)**: -55°C to +125°C  

These are the factual specifications of the BAS125-06 diode from Infineon.

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