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BAP63-02 from NXP/PHILIPS,NXP Semiconductors

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15.625ms

BAP63-02

Manufacturer: NXP/PHILIPS

Silicon PIN diode

Partnumber Manufacturer Quantity Availability
BAP63-02,BAP6302 NXP/PHILIPS 3000 In Stock

Description and Introduction

Silicon PIN diode The BAP63-02 is a high-frequency, low-capacitance silicon switching diode manufactured by NXP/Philips.  

### Key Specifications:  
- **Type**: Silicon switching diode  
- **Package**: SOD-323 (SC-76)  
- **Reverse Voltage (VR)**: 30 V  
- **Forward Current (IF)**: 250 mA  
- **Total Capacitance (Ct)**: 0.6 pF (typical at VR = 0 V, f = 1 MHz)  
- **Forward Voltage (VF)**: 0.9 V (typical at IF = 10 mA)  
- **Reverse Recovery Time (trr)**: 4 ns (typical at IF = 10 mA, IR = 1 mA)  
- **Operating Temperature Range**: -65°C to +150°C  

### Applications:  
- High-speed switching  
- RF applications  
- Signal demodulation  
- General-purpose switching  

This diode is designed for low-loss, high-frequency applications where fast switching and low capacitance are critical.

Partnumber Manufacturer Quantity Availability
BAP63-02,BAP6302 NXP 3000 In Stock

Description and Introduction

Silicon PIN diode The BAP63-02 is a dual common cathode switching diode manufactured by NXP Semiconductors. Below are its key specifications:  

- **Type**: Dual common cathode switching diode  
- **Package**: SOT-363 (SC-88)  
- **Maximum Reverse Voltage (VR)**: 30 V  
- **Continuous Forward Current (IF)**: 200 mA  
- **Peak Forward Surge Current (IFSM)**: 500 mA  
- **Forward Voltage (VF)**: 1 V (at 10 mA)  
- **Reverse Recovery Time (trr)**: 4 ns  
- **Operating Temperature Range**: -65°C to +150°C  
- **Applications**: High-speed switching, RF applications, and general-purpose diode functions  

For detailed electrical characteristics and performance curves, refer to the official NXP datasheet.

Partnumber Manufacturer Quantity Availability
BAP63-02,BAP6302 PHILIPS 240 In Stock

Description and Introduction

Silicon PIN diode The BAP63-02 is a high-frequency silicon RF transistor manufactured by PHILIPS (now NXP Semiconductors). Here are its key specifications:

- **Type**: NPN Silicon RF Transistor  
- **Application**: High-frequency amplification, VHF/UHF applications  
- **Collector-Base Voltage (VCBO)**: 30V  
- **Collector-Emitter Voltage (VCEO)**: 15V  
- **Emitter-Base Voltage (VEBO)**: 3V  
- **Collector Current (IC)**: 50mA  
- **Power Dissipation (Ptot)**: 300mW  
- **Transition Frequency (fT)**: 5GHz (typical)  
- **Noise Figure**: 1.5dB (typical at 1GHz)  
- **Package**: SOT-23 (Surface Mount)  

These specifications are based on PHILIPS' datasheet for the BAP63-02.

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