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BSS63 from INFINEON

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BSS63

Manufacturer: INFINEON

Surface mount Si-Epitaxial PlanarTransistors

Partnumber Manufacturer Quantity Availability
BSS63 INFINEON 9000 In Stock

Description and Introduction

Surface mount Si-Epitaxial PlanarTransistors The BSS63 is a P-channel enhancement mode MOSFET manufactured by Infineon. Here are its key specifications:

- **Drain-Source Voltage (VDS)**: -60V  
- **Gate-Source Voltage (VGS)**: ±20V  
- **Continuous Drain Current (ID)**: -0.3A  
- **Power Dissipation (Ptot)**: 1W  
- **On-Resistance (RDS(on))**: 5Ω (max) at VGS = -10V, ID = -0.1A  
- **Threshold Voltage (VGS(th))**: -1V to -3V  
- **Input Capacitance (Ciss)**: 15pF (typical)  
- **Output Capacitance (Coss)**: 5pF (typical)  
- **Reverse Transfer Capacitance (Crss)**: 2pF (typical)  
- **Turn-On Delay Time (td(on))**: 10ns (typical)  
- **Turn-Off Delay Time (td(off))**: 30ns (typical)  
- **Package**: SOT-223  

These specifications are based on Infineon's datasheet for the BSS63 MOSFET.

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